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The BCX56TA is an NPN medium power transistor manufactured by Diodes Incorporated, housed in a surface-mount SOT-89 package. It features a collector-emitter breakdown voltage (VCEO) of 80 V and a continuous collector current rating of 1 A. The device utilizes epitaxial planar die construction and offers a low saturation voltage of less than 500 mV at 0.5 A. Electrical characteristics include a transition frequency (fT) of 150 MHz and a DC current gain (hFE) ranging from 40 to 250. It operates within a temperature range of -55°C to +150°C.
Verify the specific part number against official manufacturer documentation to ensure correct voltage ratings and package type. Confirm compliance with environmental directives such as RoHS and REACH requirements relevant to your region. Check datasheet notes regarding thermal resistance values which vary based on PCB copper area and mounting conditions. Ensure proper handling procedures are followed during assembly to maintain component integrity.
Select this component when an NPN transistor with high voltage tolerance and moderate current capacity is required. The SOT-89 package provides a balance between power dissipation and compact footprint. Consider the complementary PNP types for push-pull configurations. Evaluate thermal management strategies based on the specified power dissipation limits and ambient operating temperatures.
This component belongs to the BCX54/55/56 series of NPN medium power transistors. The BCX56 variant specifically denotes the 80 V breakdown voltage class within this lineup. It is designed for general-purpose medium power applications requiring robust switching or amplification capabilities in a surface-mount format.
BCX5616TA
The maximum collector-emitter breakdown voltage (VCEO) is 80 V.
Yes, an automotive-compliant part is available under the separate part number BCX5616Q.
The transition frequency (fT) is typically 150 MHz at a collector current of 50 mA and VCE of 10 V.