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The BCX56TF is an NPN silicon bipolar junction transistor manufactured by Nexperia, housed in a SOT-89-3 surface-mount package. It supports a maximum collector current of 1 A and offers high power dissipation capabilities. Key electrical ratings include a collector-emitter voltage (VCEO) of 80 V, a collector-base voltage (VCBO) of 100 V, and an emitter-base voltage (VEBO) of 5 V. The device features a collector-emitter saturation voltage of 500 mV and a power dissipation (Pd) of 500 mW. It operates within a temperature range of -55°C to +150°C.
Verify the exact suffix against official Nexperia documentation to confirm packaging type and reel specifications. Ensure the component meets RoHS compliance standards required for your assembly process. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and availability status before finalizing procurement orders.
Select this component when designing circuits requiring an NPN transistor with 80 V collector-emitter voltage and 1 A continuous current handling. The SOT-89 package provides a balance between thermal performance and board space efficiency. Consider the specific hFE bin required for your application, as gain variations may impact amplifier linearity or switching thresholds in sensitive designs.
This component belongs to the BCX56 series of NPN medium power transistors from Nexperia. These devices are designed for general-purpose switching and amplification tasks. The series utilizes silicon technology and is optimized for surface-mount assembly, providing reliable performance in industrial and consumer electronics applications where moderate power handling is necessary.
Consult official Nexperia substitution guides for verified equivalents. Generic replacements must match the SOT-89-3 footprint, NPN polarity, and minimum 80 V / 1 A ratings. Verify that any substitute maintains comparable power dissipation and thermal characteristics to ensure system reliability.