SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX70GE6327HTSA1 is an NPN silicon general-purpose bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and belongs to the BCX70 series. The device supports a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 250 to 460, a transition frequency (fT) of 250 MHz, and a power dissipation capability of 330 mW. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix 'G' against official Infineon documentation to confirm binning or gain classification, as standard datasheets may list generic ranges. Confirm end-of-life status and obsolescence notifications prior to final design approval. Ensure compatibility with RoHS3 directives and check for any specific handling requirements associated with the SOT-23-3 package during assembly.
Select this component when a high-gain NPN transistor is required in a compact SMD form factor. The 250-460 hFE range offers flexibility for biasing without excessive base current. Consider the 45V VCEO rating for low-voltage logic interfacing. Verify thermal management needs given the 330mW dissipation limit in small packages compared to higher-power alternatives.
This part is part of the BCX70 family of NPN transistors designed for general-purpose use. The 'E6327HTSA1' suffix indicates Infineon's standard tape-and-reel packaging format. It shares the same core die and electrical specifications as other variants in the BCX70 series, differing primarily in packaging or binning configurations.
Direct substitutes include BCX70JE6327HTSA1 and BCX70KE6327HTSA1, which share identical pinouts and core electrical parameters but may differ in hFE gain binning classifications. Verify that the alternative variant meets the specific gain requirements of the circuit design.