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The BCX70H,235 is a silicon NPN general-purpose bipolar junction transistor manufactured by Nexperia. It is housed in a compact SOT-23 (TO-236AB) surface-mount package designed for automated assembly. The device supports a maximum continuous collector current of 100 mA and withstands collector-emitter voltages up to 45 V. Key electrical characteristics include a gain-bandwidth product of 250 MHz and a power dissipation rating of 250 mW. The component operates reliably within an extended temperature range from -65 °C to +150 °C.
Verify the specific suffix code against official Nexperia documentation to confirm binning and gain classification. Ensure the ordering part number matches the required hFE range for the intended circuit design. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement specifications.
Select this component when a small form factor NPN transistor with moderate current handling is required. The BCX70H variant offers specific DC current gain characteristics distinct from other BCX70 series options. Evaluate the thermal management requirements given the 250 mW power dissipation limit in the SOT-23 package.
This part belongs to the BCX70 series of general-purpose NPN transistors produced by Nexperia. The series provides complementary PNP devices, such as the BCX71H, for push-pull configurations. The BCX70H designation specifically indicates the gain binning and performance tier within the broader family of small-signal switching transistors.
Direct functional substitutes within the same gain bin may include BCX70J or BCX70K variants, though their specific hFE ranges differ. Verify pinout compatibility and thermal characteristics when cross-referencing with other manufacturers' equivalent small-signal NPN transistors.