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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max)：20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 2mA, 5V
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BCX70JE6327HTSA1 is an NPN silicon small-signal bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and belongs to the BCX70 series. The device supports a maximum collector current of 200 mA with a continuous rating of 100 mA. Key electrical limits include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 45 V, and an emitter-base voltage (VEBO) of 6 V. Power dissipation is rated at 330 mW, with a transition frequency (fT) of 250 MHz. DC current gain ranges from a minimum of 250 to a maximum of 460. Operating temperatures span from -65°C to +150°C.
Feature Summary
- Utilizes silicon technology for reliable small-signal amplification and switching applications.
- Designed for surface-mount installation within a compact SOT-23-3 footprint.
- Provides high DC current gain suitable for general-purpose amplifier circuits.
Applications
- General-purpose signal amplification
- Switching applications in low-power circuits
- Audio pre-amplifier stages
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status via the manufacturer's documentation. Check the product lifecycle status as obsolescence information may affect long-term availability. Ensure the specific suffix matches the required gain binning and packaging format for your design requirements.
Selection Notes
Select this component when a standard NPN BJT with moderate current handling and high gain is required in a small surface-mount package. Compare against the BCX70KE variant if higher minimum gain specifications are necessary for your circuit design. Consider thermal management capabilities given the 330 mW power dissipation limit in the SOT-23-3 housing.
Part Context
This part is a member of the BCX70 family of NPN silicon transistors produced by Infineon Technologies. The E6327HTSA1 suffix indicates specific tape-and-reel packaging and manufacturing lot details. It serves as a general-purpose discrete semiconductor device widely used in consumer electronics and industrial control systems requiring reliable small-signal performance.
Replacement Considerations
The BCX70KE6327HTSA1 is a verified alternative within the same series offering different gain characteristics. Verify pinout compatibility and electrical parameter overlaps before substitution. Consult official datasheets for both parts to ensure functional equivalence in the target application.
