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The BCX70KE6327HTSA1 is an NPN silicon general-purpose bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and meets AEC-Q100 automotive qualification standards. The device supports a maximum collector current of 100 mA and withstands collector-emitter and collector-base voltages of 45 V each, with an emitter-base voltage rating of 6 V. Key electrical characteristics include a transition frequency (fT) of 250 MHz, a power dissipation capacity of 330 mW, and a DC current gain (hFE) ranging from 380 to 630. It operates within a temperature range of -65°C to +150°C.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific suffix matches the required AEC-Q100 qualification status. Review official datasheets for precise electrical limits and thermal management requirements before integration into final assemblies.
Select this component when automotive reliability is mandatory for NPN switching or amplification tasks. The high hFE range suits low-drive applications, while the 45V rating defines its voltage handling limits. Ensure the SOT-23-3 footprint aligns with existing PCB layouts and that thermal constraints are managed within the specified power dissipation envelope.
This part belongs to the BCX70 series of NPN silicon transistors produced by Infineon Technologies. It shares the same physical SOT-23-3 form factor as other variants in the family but is distinguished by its specific gain binning and automotive certification. The 'K' suffix typically denotes the specific gain range, differentiating it from non-automotive or differently binned counterparts like the BCX70JE6327HTSA1.
Direct substitutes must match the SOT-23-3 package, NPN polarity, 45V voltage ratings, and AEC-Q100 qualification. Verify that alternative parts meet the minimum hFE requirement of 380 and the 250 MHz transition frequency to ensure functional equivalence in existing designs.