SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX71GE6327HTSA1 is a single NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package designed for audio frequency applications. Key electrical parameters include a maximum collector-emitter voltage of 45 V, a continuous collector current of 100 mA, and a power dissipation rating of 330 mW. The device features a transition frequency of 250 MHz and a DC current gain range between 250 and 460. It operates within a temperature range of -65°C to +150°C.
Verify the specific suffix 'G' against official Infineon documentation to confirm binning or grade variations compared to standard variants. Confirm end-of-life status as distribution data indicates obsolescence for related BCX71JE parts. Ensure RoHS compliance details are validated through the manufacturer's current datasheet before final procurement decisions.
Select this component when an NPN BJT with moderate current handling and high gain is required in a small surface-mount footprint. Compare performance metrics such as hFE and fT against alternative SOT-23 transistors if supply constraints exist. Verify that the 45V voltage rating and 100mA current limit align with the specific circuit requirements.
This part belongs to the BCX71 series of general-purpose NPN transistors from Infineon. The series is commonly used in low-power analog and digital switching applications. The E6327HTSA1 suffix denotes specific tape-and-reel packaging and manufacturing lot information defined by Infineon for automated assembly processes.
Publicly confirmed substitute part numbers for the BCX71GE6327HTSA1 were not found in the provided source material. Consult official Infineon cross-reference tools for verified alternatives.