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The BCY58-VII PBFREE is a single NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It features a TO-18-3 metal can package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 32 V, a collector-base voltage (VCBO) of 32 V, and an emitter-base voltage (VEBO) of 7 V. The device supports a maximum DC collector current of 100 mA with a power dissipation rating of 340 mW. It exhibits a gain-bandwidth product (fT) of 150 MHz and a collector-emitter saturation voltage of 700 mV. The component operates within a temperature range of -65°C to +200°C.
Verify the specific suffix designation when ordering, as manufacturing changes may occur. Confirm RoHS compliance status directly with the manufacturer or authorized distributor documentation prior to integration. Check for end-of-life notices or obsolescence warnings, as availability may be limited. Ensure that the TO-18-3 pinout matches the target PCB footprint design requirements.
Select this component for designs requiring a robust NPN transistor in a metal can package capable of withstanding high junction temperatures. Compare the 32 V voltage ratings and 100 mA current limits against circuit demands. Consider the 340 mW power dissipation capability relative to thermal management strategies. Evaluate the 150 MHz bandwidth against signal frequency requirements to ensure adequate performance margins.
This part belongs to the BCY series of NPN transistors produced by Central Semiconductor Corp. The series typically utilizes the TO-18 metal can format, which offers superior environmental protection compared to plastic packages. These devices are positioned for applications where reliability and thermal resilience are prioritized over cost-sensitive mass production volumes.
BCY59-VII PBFREE
The maximum operating junction temperature is +200°C.
It uses a TO-18-3 metal can package.
The collector-emitter saturation voltage is specified as 700 mV.