BCY58-VIII TIN/LEAD

$0.86

Description：32V 100MA 340MW TH TRANSISTOR-SM
Series：BCY58

SKU:04c5cb6bcfe1 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：32V 100MA 340MW TH TRANSISTOR-SM
Series：BCY58
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：32 V
Vce Saturation (Max) @ Ib, Ic：700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max)：10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 2mA, 5V
Power - Max：340 mW
Frequency - Transition：150MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-206AA, TO-18-3 Metal Can
Supplier Device Package：TO-18
Grade：-
Qualification：-

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BCY58-VIII TIN/LEAD

Overview

The BCY58-VIII TIN/LEAD is a single NPN silicon bipolar junction transistor manufactured by Central Semiconductor Corp. It features a maximum collector-emitter voltage of 32 V and a continuous collector current rating of 100 mA. The device supports through-hole mounting in a TO-18 metal can package with three leads. Key electrical characteristics include a transition frequency of 150 MHz, a maximum DC current gain of 460 at 2 mA and 5 V, and a minimum gain of 40 at 10 uA and 5 V. Power dissipation is rated at 340 mW, with an operating temperature range from -65°C to +200°C.

Feature Summary

NPN silicon construction for reliable small-signal amplification
High DC current gain capability up to 460 under specified conditions
Wide thermal operating range extending to +200°C junction temperature
Robust TO-18 metal can packaging suitable for harsh environments

Applications

General-purpose small-signal amplification circuits
Switching applications requiring high-speed response
Audio signal processing stages
Industrial control systems with wide temperature requirements

Procurement Notes

Verify the specific suffix TIN/LEAD against the latest manufacturer datasheet to confirm lead material composition and compliance status. Ensure the ordering part number matches the exact electrical parameters required for the design. Confirm availability and standard packaging quantities directly with authorized distributors or the manufacturer. Check for any recent product change notices that may affect pinout or specifications.

Selection Notes

Select this component when a rugged NPN transistor with high gain and wide temperature tolerance is needed. The TO-18 package provides superior thermal stability compared to plastic alternatives. Consider the 32 V breakdown voltage and 100 mA current limit to ensure adequate headroom for the intended circuit load. Verify that the 340 mW power dissipation rating meets the thermal management requirements of the application.

Part Context

This component belongs to the BCY58 series of small-signal transistors produced by Central Semiconductor Corp. The series includes variants such as BCY58-IX and BCY59-VII, offering different voltage and current ratings. These devices are designed for general-purpose use in analog and digital switching applications. The BCY58-VIII specifically targets applications requiring high reliability and performance in demanding environments.