BCY59-IX TIN/LEAD

$0.86

Description：45V 100MA 340MW TH TRANSISTOR-SM
Series：BCY59

SKU:8a1943f7cfb0 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：45V 100MA 340MW TH TRANSISTOR-SM
Series：BCY59
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max)：10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 2mA, 5V
Power - Max：340 mW
Frequency - Transition：150MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-206AA, TO-18-3 Metal Can
Supplier Device Package：TO-18
Grade：-
Qualification：-

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BCY59-IX TIN/LEAD

Overview

The BCY59-IX TIN/LEAD is a silicon NPN single bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes an epitaxial planar process and is housed in a TO-18-3 metal can package for through-hole mounting. The device supports a maximum collector-emitter voltage of 32 V, a continuous collector current of 100 mA, and a power dissipation rating of 340 mW at 25°C ambient temperature. It features a transition frequency of 150 MHz and operates within a junction temperature range of -65°C to +200°C.

Feature Summary

Utilizes an epitaxial planar silicon process for stable performance
Designed for general-purpose amplification applications
Housed in a hermetically sealed metal can package

Applications

General-purpose amplifier circuits
Switching applications requiring high reliability
Military and aerospace electronic systems

Procurement Notes

Verify component authenticity due to the discontinued status of this part number. Confirm that the tin/lead plating meets specific environmental or regulatory requirements for the intended application. Ensure compatibility with existing through-hole assembly processes and verify that the TO-18-3 package dimensions match the design footprint. Check for available surplus stock from authorized distributors.

Selection Notes

Select this component when a ruggedized NPN transistor with a metal case is required for high-temperature environments up to 200°C. Consider its 150 MHz transition frequency for moderate-speed switching or amplification tasks. Evaluate the 340 mW power dissipation limit against thermal management constraints in the final assembly. Compare specifications with other BCY59 variants if lead-free compliance is mandatory.

Part Context

This component belongs to the BCY59 series of NPN transistors produced by Central Semiconductor Corp. The series includes various suffixes indicating different electrical grades and packaging options. The BCY59-IX variant specifically denotes the tin/lead plated version in a TO-18-3 metal can. These devices are typically used in applications demanding high reliability and radiation hardness characteristics common in military-grade electronics.