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The BCY59-X PBFREE is a silicon NPN epitaxial planar transistor manufactured by Central Semiconductor Corp. It features a hermetically sealed metal TO-18 package designed for low noise amplifier and switching applications. Key electrical parameters include a collector-emitter breakdown voltage of 45 V, a collector current of 100 mA, and a transition frequency of 150 MHz. The device supports a maximum power dissipation of 1 W and operates within a junction temperature range of -65°C to 200°C.
Verify the specific suffix variant against official datasheets to ensure compatibility with design requirements. Confirm RoHS compliance status and environmental classifications prior to integration. Check manufacturer documentation for any recent product change notices or end-of-life announcements affecting supply continuity.
Select this component when hermetic sealing and low noise performance are critical for the application. Ensure the TO-18 package fits the mechanical constraints. Verify that the 45 V breakdown voltage and 100 mA current limits meet the circuit demands without exceeding thermal ratings.
This part belongs to the BCY58/BCY59 series of silicon NPN epitaxial planar transistors from Central Semiconductor Corp. These devices share similar structural characteristics and are mounted in hermetically sealed metal cases. The series is engineered for reliability in demanding electronic environments requiring stable NPN performance.
Consult official substitution guides for confirmed equivalent part numbers. Do not assume cross-model compatibility based on generic specifications alone. Verify pinout and electrical parameters against the target replacement before implementation.