BCY78-X TIN/LEAD

$0.86

Description：32V 100MA 340MW TH TRANSISTOR-SM
Series：BCY78

SKU:2063b13a2e21 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：32V 100MA 340MW TH TRANSISTOR-SM
Series：BCY78
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：32 V
Vce Saturation (Max) @ Ib, Ic：800mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：380 @ 2mA, 5V
Power - Max：1 W
Frequency - Transition：100MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-206AA, TO-18-3 Metal Can
Supplier Device Package：TO-18
Grade：-
Qualification：-

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BCY78-X TIN/LEAD

Overview

The BCY78-X TIN/LEAD is a PNP silicon small-signal bipolar junction transistor manufactured by Central Semiconductor Corp. It is housed in a TO-18 metal can package and designed for through-hole mounting. The device features a collector-emitter voltage rating of 32V, a collector-base voltage of 45V, and an emitter-base voltage of 6V. It supports a maximum DC collector current of 100mA with a power dissipation capacity of 400mW. The component operates within a temperature range of -65°C to +200°C and offers a gain-bandwidth product of 100MHz.

Feature Summary

Utilizes a hermetically sealed TO-18 metal can package for robust environmental protection
Engineered for high-temperature operation up to 200°C
Provides stable amplification characteristics suitable for general-purpose switching applications

Applications

General-purpose signal amplification circuits
Electronic switching applications requiring high-temperature tolerance
Audio frequency amplifier stages

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm lead content and exact electrical tolerances. Ensure the procurement channel provides valid traceability records for the tin/lead variant. Cross-reference the datasheet revision date to guarantee alignment with current manufacturing specifications before finalizing orders.

Selection Notes

Select this component when a PNP transistor with a 32V collector-emitter rating and TO-18 packaging is required. Consider its 100mA current capability and 400mW power dissipation limits relative to circuit demands. Evaluate the suitability of the silicon construction and high-temperature range for the intended operating environment compared to plastic-packaged alternatives.

Part Context

This part belongs to the BCY series of small-signal bipolar transistors produced by Central Semiconductor. The series includes various NPN and PNP variants optimized for low-power amplification and switching tasks. The BCY78-X specifically denotes the PNP configuration within this lineup, sharing common design principles with other members like the BCY79 while differing in polarity and specific voltage ratings.