BCY79-IX TIN/LEAD

$0.86

Description：45V 100MA 340MW TH TRANSISTOR-SM
Series：BCY79

SKU:70354435db5e Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：45V 100MA 340MW TH TRANSISTOR-SM
Series：BCY79
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：800mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 2mA, 5V
Power - Max：1 W
Frequency - Transition：100MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-206AA, TO-18-3 Metal Can
Supplier Device Package：TO-18
Grade：-
Qualification：-

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BCY79-IX TIN/LEAD

Overview

The BCY79-IX TIN/LEAD is a PNP silicon small-signal bipolar transistor manufactured by Central Semiconductor Corp. It is housed in a TO-18 metal can package and designed for general-purpose amplifier applications. The device features a maximum collector current of 200 mA and a collector-emitter breakdown voltage of 45 V. It exhibits a minimum DC current gain (hFE) of 60 and supports a maximum operating temperature of 200 °C with a power dissipation rating of 1 W.

Feature Summary

Utilizes a hermetic metal TO-18 cylindrical package for robust environmental protection
Engineered for low-noise general-purpose amplification tasks
Capable of high-temperature operation up to 200 °C

Applications

General-purpose signal amplification circuits
Low-noise audio pre-amplifier stages
High-temperature electronic systems requiring reliable switching or linear operation

Procurement Notes

Verify the specific IX suffix against the manufacturer's datasheet to confirm pinout orientation and electrical tolerances. Ensure the TIN/LEAD plating specification meets the required environmental compliance standards for the target assembly process. Cross-reference the TO-18 mechanical dimensions with the PCB footprint to guarantee proper physical fitment during installation.

Selection Notes

Select this component when a rugged, hermetically sealed PNP transistor is required for high-reliability environments. The TO-18 metal case provides superior thermal stability compared to plastic packages. Consider the 200 mA current limit and 45 V voltage rating to ensure adequate headroom for the intended circuit design requirements.

Part Context

This part belongs to the BCY79 series of PNP silicon transistors produced by Central Semiconductor. The series is characterized by its use in discrete semiconductor applications where durability and consistent performance are prioritized. The BCY79-IX variant specifically denotes the tin/lead terminal finish and the IX configuration within the product line.