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The BCY79 PBFREE is a single PNP silicon bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-18-3 metal can package for through-hole mounting. The device supports a maximum collector current of 100 mA and a collector-emitter voltage (VCEO) of 45 V. Key electrical characteristics include a collector-base voltage (VCBO) of 45 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation rating of 340 mW. The component features a minimum DC current gain (hFE) of 120 and a maximum of 630, with a transition frequency (fT) of 100 MHz. It operates within a temperature range of -65°C to +200°C.
Verify the specific manufacturing lot and RoHS compliance status directly with Central Semiconductor Corp prior to procurement. Confirm that the TO-18-3 pinout matches the target circuit design requirements. Ensure the supplier provides valid traceability documentation for this through-hole component. Check for any recent product change notifications that may affect mechanical dimensions or electrical tolerances.
Select this component when a PNP transistor with a 45 V breakdown voltage and 100 mA continuous current capability is required. The TO-18-3 package is appropriate for designs necessitating through-hole assembly and superior heat dissipation compared to plastic packages. Consider the 100 MHz transition frequency for low-to-medium frequency signal processing tasks where high thermal tolerance is critical.
This part belongs to the Central Semiconductor BJT family, specifically engineered for ruggedized electronics. The BCY79 variant serves as a PNP counterpart in general-purpose transistor series. It is distinct from surface-mount alternatives by its metal can construction, which offers enhanced environmental protection and thermal performance for demanding industrial or defense applications.
Publicly confirmed substitute part numbers are not available in the provided source material.