BCY79-X TIN/LEAD

$0.86

Description：45V 100MA 340MW TH TRANSISTOR-SM
Series：BCY79

SKU:65a72b22703f Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：45V 100MA 340MW TH TRANSISTOR-SM
Series：BCY79
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：800mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：380 @ 2mA, 5V
Power - Max：1 W
Frequency - Transition：100MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-206AA, TO-18-3 Metal Can
Supplier Device Package：TO-18
Grade：-
Qualification：-

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BCY79-X TIN/LEAD

Overview

The BCY79-X TIN/LEAD is a PNP silicon small-signal bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-18 metal can package for through-hole mounting. The device supports a maximum collector current of 200 mA and a collector-emitter voltage of 45 V. Key electrical characteristics include a minimum DC current gain (hFE) of 60, a collector-base capacitance of 7 pF, and a power dissipation rating of 1 W. The component operates within a temperature range up to 200 °C.

Feature Summary

PNP polarity configuration for signal amplification
Metal can construction for thermal stability
High operating temperature capability

Applications

General purpose small signal amplification
Switching circuits
Audio pre-amplifier stages

Procurement Notes

Verify the specific manufacturer designation as Central Semiconductor Corp differs from other vendors listing similar part numbers. Confirm RoHS compliance status and lead finish specifications against the latest datasheet. Ensure the TO-18 pinout matches the target circuit design requirements before integration.

Selection Notes

Select this component for applications requiring robust metal-can packaging and high-temperature operation. Compare the 45 V breakdown voltage and 200 mA current limits against circuit demands. Evaluate the hFE gain range to ensure sufficient amplification for the intended signal processing task.

Part Context

This part belongs to the BCY79 series of general-purpose PNP transistors. It serves as a discrete semiconductor solution for low-power analog and digital switching applications. The TO-18 package provides mechanical durability suitable for harsh environments compared to plastic alternatives.