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The BD135-16 is an NPN silicon epitaxial planar power transistor manufactured by STMicroelectronics. It is housed in a SOT-32 plastic package designed for through-hole mounting. The device features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 1.5 A, with a peak current capability of 3 A. Total power dissipation reaches 12.5 W at a case temperature of 25 °C and 1.25 W at an ambient temperature of 25 °C. The component operates within a junction temperature range up to 150 °C and includes pre-selected DC current gain groups.
Verify the specific ordering code BD135-16 against the official ST datasheet to confirm the exact hFE grouping and packaging type. Ensure the procurement documentation matches the SOT-32 package format and ECOPACK environmental specifications. Confirm that the supplier provides traceability to the manufacturer's original production batch data.
Select this component when a 45 V NPN transistor with 1.5 A continuous current capability is required. The BD135-16 offers specific DC current gain groupings compared to standard variants. Consider the thermal resistance values and power dissipation limits relative to the intended operating environment and heat sinking requirements.
The BD135-16 belongs to the BD135 family of complementary low voltage transistors from STMicroelectronics. This family includes NPN types (BD135, BD139) and PNP types (BD136, BD140). These devices are engineered for audio and driver applications utilizing complementary topologies. The BD135-16 specifically denotes a variant with defined current gain characteristics within this series.
The BD139-16 serves as a direct replacement within the same family, offering identical electrical ratings but with different pre-selected DC current gain groupings. Verify that the application tolerates the specific hFE variations associated with the BD139-16 before substituting.