ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN 45V 1.5A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
- Power - Max：1.25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
Download product information
Overview
The BD1356S is an NPN silicon epitaxial planar transistor manufactured by onsemi. It features a maximum DC collector current of 1.5 A and a collector-emitter voltage rating of 45 V. The device is housed in a TO-126 (FLANGE MOUNT) package with three pins, designed for through-hole installation. Key electrical specifications include a minimum DC current gain (hFE) of 40 and a maximum power dissipation of 1.25 W. The component supports a maximum operating temperature of 150°C.
Feature Summary
- Epitaxial planar construction for reliable performance
- Designed for complementary or quasi-complementary circuits
- Suitable for audio amplifier applications
Applications
- Audio amplifiers
- Driver circuits
- Complementary circuit configurations
Procurement Notes
Verify the specific manufacturer source, as the provided documentation attributes this part to Fairchild Semiconductor. Confirm RoHS compliance status and ensure the package type matches the required FLANGE MOUNT configuration. Validate that the 45V voltage rating aligns with the target application requirements before procurement.
Selection Notes
Select this component for designs requiring an NPN transistor with a 1.5A current capacity and 45V breakdown voltage. The TO-126 flange mount package facilitates heat dissipation for moderate power levels up to 1.25W. Ensure the circuit design accommodates the specified hFE minimum of 40 for proper biasing and signal amplification.
Part Context
This transistor belongs to the broader category of bipolar junction transistors (BJT). It serves as an NPN counterpart to PNP types like the BD136, enabling push-pull output stages. The TO-126 package provides a robust mechanical solution for mounting onto heatsinks in power electronics applications.
Replacement Considerations
Direct substitutes may include other NPN transistors from the BD135 series family, such as the BD135, provided they meet the 45V and 1.5A specifications. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers.
