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The BD13616S is a PNP epitaxial silicon transistor from the BD136 series, manufactured by onsemi. It features a TO-126-3 package for through-hole mounting. Key electrical ratings include a collector-emitter voltage of 45 V, a collector-base voltage of 45 V, and an emitter-base voltage of 5 V. The device supports a maximum DC collector current of 1.5 A and a pulse current of 3.0 A. Power dissipation is rated at 12.5 W at a case temperature of 25°C and 1.25 W at an ambient temperature of 25°C. The junction temperature range extends up to +150°C. The hFE classification '16' indicates a DC current gain range of 100 to 250.
Verify component authenticity as this part is listed as obsolete or end-of-life by the manufacturer. Confirm availability of alternative packages or updated series replacements such as the BD136G. Ensure that any substitute components meet the original design requirements for voltage, current, and thermal dissipation before integration into production systems.
Select this component for medium-power linear and switching tasks requiring a PNP configuration. The BD13616S variant offers a high gain band (100-250), suitable for precision amplification. Consider the TO-126 package for heat sinking capabilities when operating near maximum power dissipation limits. Verify compatibility with complementary NPN types like the BD135 or BD139 for balanced circuit designs.
The BD13616S belongs to the BD136 family of medium-power PNP transistors. This series is engineered to complement NPN counterparts such as the BD135, BD137, and BD139. These devices are widely used in analog signal processing and power control applications where moderate current handling and voltage ratings are required.
BD13616STU and BD136G are documented direct substitutes within the same product family.