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Product Detailed Parameters
- Description：TRANS PNP 45V 1.5A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
- Power - Max：1.25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD1366S is a PNP epitaxial silicon transistor from onsemi, designed for medium-power applications. It features a TO-126-3 (TO-225AA) through-hole package. Key electrical parameters include a maximum collector current of 1.5 A and a collector-emitter voltage (VCEO) of 45 V. The device has a power dissipation rating of 12.5 W at case temperature and 1.25 W at ambient temperature. DC current gain ranges from 40 to 250. The maximum operating junction temperature is +150°C.
Feature Summary
- Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits
- High DC current gain for effective signal amplification
- RoHS compliant with lead-free and halogen/BFR-free design
Applications
- Audio amplifier stages
- Driver circuits in complementary configurations
- Quasi-complementary output stages
Procurement Notes
Verify end-of-life status before procurement as the component is listed as obsolete. Confirm availability through authorized distributors or surplus channels. Ensure the specific suffix matches the required packaging and tape/reel specifications if applicable. Check RoHS compliance documentation for environmental requirements. Validate pinout compatibility with existing PCB footprints.
Selection Notes
Select this component for medium-power PNP applications requiring high current gain. Compare VCEO ratings against circuit voltage requirements to ensure safety margins. Consider thermal management due to significant power dissipation differences between case and ambient conditions. Evaluate hFE binning needs for consistent performance in analog stages. Verify package dimensions for mechanical fit.
Part Context
The BD136 series includes complementary NPN transistors such as the BD135. These devices are part of onsemi's plastic encapsulated medium-power transistor lineup. They are engineered for robust performance in audio and driver applications. The series offers standardized pinouts for easy substitution in existing designs.
Replacement Considerations
- BD136G
- BD136STU
FAQ
What is the maximum collector-emitter voltage for the BD1366S?
The maximum collector-emitter voltage (VCEO) is 45 V.
Is the BD1366S RoHS compliant?
Yes, the BD1366S is RoHS compliant and features a lead-free, halogen/BFR-free design.
