BD1366STU

$0.11

Description：TRANS PNP 45V 1.5A TO-126-3
Series：-

SKU:348945240206 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 45V 1.5A TO-126-3
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：PNP
Current - Collector (Ic) (Max)：1.5 A
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
Power - Max：1.25 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126-3
Grade：-
Qualification：-

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BD1366STU

Overview

The onsemi BD1366STU is a PNP epitaxial silicon planar power transistor housed in a TO-220F package. It supports a maximum continuous collector current of 3 A and a collector-emitter voltage (VCEO) of 60 V. The device features a maximum power dissipation of 25 W and a transition frequency (fT) of 9 MHz. Key electrical limits include a collector-base voltage (VCBO) of -60 V, an emitter-base voltage (VEBO) of -7 V, and a minimum DC current gain (hFE) of 20. The component operates at temperatures up to +150°C.

Feature Summary

High current handling capability for robust power switching applications
Epitaxial silicon construction ensures stable thermal performance
Designed for through-hole mounting with integrated heat sink tab

Applications

General-purpose power amplification circuits
Linear regulator output stages
Motor control driver interfaces

Procurement Notes

Verify the specific suffix 'STU' against the manufacturer's official datasheet to confirm pinout orientation and lead form compatibility. Ensure the procurement source provides valid RoHS compliance documentation. Cross-reference the part number with the latest onsemi product change notices to confirm manufacturing status and material composition updates prior to finalizing orders.

Selection Notes

Select this component when a PNP configuration is required with moderate voltage ratings and high current capacity. Compare the 60 V breakdown voltage against circuit requirements to ensure adequate safety margins. Evaluate the TO-220F package thermal resistance relative to the expected power dissipation levels in the target application environment.

Part Context

This device belongs to the KSB series of power transistors from onsemi. It serves as a complementary or alternative option within the broader family of medium-power bipolar junction transistors designed for general-purpose switching and linear regulation tasks in industrial and consumer electronics.