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The BD137-6-BP is an NPN silicon power transistor manufactured by Micro Commercial Components. It features a collector-emitter voltage of 60 Vdc and supports a continuous collector current of 1.5 Adc. The device provides a minimum DC current gain (hFE) of 40, classified under Rank 6 with a range of 40 to 100. Total device dissipation reaches 1.25 W at 25°C ambient temperature and 12.5 W at 25°C case temperature. It operates within a junction temperature range of -55 to +150 °C.
Verify the specific suffix '-BP' indicates bulk packaging containing 1,000 pieces per box as defined by MCC ordering information. Confirm RoHS compliance status based on the presence of the 'P' suffix designation. Ensure procurement from authorized distributors to guarantee genuine parts with full traceability and adherence to quality standards.
Select this component when a 60 V collector-emitter breakdown voltage is required alongside a 1.5 A continuous current capability. The Rank 6 hFE classification suits applications requiring a minimum gain of 40. Consider the TO-92 package constraints for thermal management, noting the lower dissipation rating at ambient temperatures compared to flange-mounted alternatives.
This part belongs to the BD135/BD137/BD139 series of NPN silicon power transistors. The numeric suffix '6' specifically denotes the 60 V voltage rating, distinguishing it from the BD135 (45 V) and BD139 (80 V). The series is designed for complementary operation with corresponding PNP types.
Public confirmed substitute part numbers are not provided in the source material.