BD137

$0.20

Description：TRANS NPN 60V 1.5A TO-126
Series：-

SKU:e8fa4c4b72b3 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 60V 1.5A TO-126
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：1.5 A
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
Power - Max：1.25 W
Frequency - Transition：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

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BD137

Overview

The BD137G is a plastic medium-power silicon NPN transistor from the BD135 series, designed for audio amplifiers and drivers in complementary or quasi-complementary circuits. It features a collector-emitter voltage of 60 Vdc and a maximum collector current of 1.5 Adc. The device operates within a junction temperature range of -55 to +150 °C. DC current gain (hFE) ranges from 25 to 250 depending on collector current conditions. Total device dissipation is rated at 1.25 W at 25°C ambient and 12.5 W at 25°C case temperature.

Feature Summary

Designed for use as audio amplifiers and drivers utilizing complementary or quasi-complementary circuits
Complementary pairing with BD 136, 138, and 140 PNP types
High DC current gain performance across varying collector currents

Applications

Audio amplifier circuits
Driver stages in complementary configurations
Quasi-complementary circuit designs

Procurement Notes

Verify RoHS compliance status and Pb-free packaging availability when sourcing. Confirm package style matches TO-225 requirements. Check for discontinuation notices as these devices may not be recommended for new designs. Ensure thermal management aligns with specified derating curves for intended operating temperatures.

Selection Notes

Select based on required collector-emitter voltage rating of 60 Vdc and 1.5 A current capacity. Consider complementary BD138 for paired applications. Evaluate thermal resistance characteristics for heat sink design. Verify hFE binning requirements for specific gain applications.

Part Context

Part of the BD135 series including BD135G, BD137G, and BD139G variants. These transistors share similar construction but differ in voltage ratings. The series utilizes plastic encapsulation suitable for through-hole mounting in TO-225 packages.