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The BD1376S is a PNP epitaxial silicon power transistor from the onsemi BD136 series, housed in a TO-126-3 through-hole package. It features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 45 V. The device has a collector-base voltage of 45 V and an emitter-base voltage of 5 V. DC current gain ranges from 40 to 250, with a maximum collector-emitter saturation voltage of 500 mV. Power dissipation is rated at 12.5 W, and the maximum operating temperature is +150°C.
Verify component authenticity through authorized distributors due to End-of-Life status. Confirm RoHS compliance details via official documentation. Check for alternative sourcing options as availability may be limited. Ensure storage conditions meet semiconductor handling standards to prevent degradation before installation.
Select this component for designs requiring PNP polarity with 1.5 A current capacity. Verify voltage ratings match circuit requirements, noting the 45 V limit. Consider thermal resistance in PCB layout for 12.5 W dissipation. Compare against NPN alternatives like BD137 if polarity differs. Validate hFE range suitability for specific gain requirements.
Part of the BD136 series, which includes complementary NPN variants. Designed for general-purpose power applications. Manufactured by onsemi using standard silicon processes. Available in bulk packaging. Part number alias includes BD13616S_NL. Unit weight is approximately 761 mg.
BD13616S is listed as an alias part number. No other direct substitutes are confirmed in public data. Evaluate functional equivalents based on matching electrical parameters and package type when original supply is unavailable.