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The onsemi BD138 is a PNP epitaxial silicon power transistor housed in the TO-126 package. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 1.5 A. The device supports a total device dissipation of 12.5 W at case temperatures of 25°C, with a derating factor of 100 mW/°C above this threshold. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix (e.g., -6) against the required datasheet revision. Confirm RoHS compliance status as older variants may differ. Ensure the TO-126 flange mount package matches the thermal management requirements of the target application.
Select based on the 60 V collector-emitter voltage limit and 1.5 A current capacity. Consider the 12.5 W power dissipation capability when designing heat sinking solutions. Verify compatibility with complementary NPN transistors if used in push-pull configurations.
The BD138 belongs to a family of medium power PNP transistors intended for audio and driver applications. It serves as a complement to the BD137 NPN transistor, enabling balanced performance in push-pull output stages. The TO-126 package provides robust mechanical stability for higher power handling.