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The BD138-6-BP is a PNP epitaxial silicon power transistor manufactured by Micro Commercial Components. It features a collector-emitter voltage of -60 V and a maximum continuous collector current of 1.5 A. The device utilizes a TO-126 flange mount package with an isolated case connection. Electrical characteristics include a minimum DC current gain (hFE) range of 40 to 100 for the Rank 6 classification. Total device dissipation reaches 1.25 W at a case temperature of 25°C, with a thermal resistance from junction to case of 100°C/W.
Verify authenticity through authorized MCC distributors to avoid counterfeit components. Confirm the specific hFE rank required for the application design. Ensure the ordering suffix matches the desired compliance specifications, such as halogen-free status if applicable. Review the manufacturer's life support usage restrictions before integration into critical systems.
Select this component based on the required -60 V collector-emitter breakdown voltage and 1.5 A current handling capacity. Consider the thermal management requirements associated with the TO-126 package and its 100°C/W junction-to-case thermal resistance. Verify that the Rank 6 hFE gain range aligns with the circuit's biasing needs. Ensure the PNP configuration matches the system topology relative to complementary NPN options.
This part belongs to the BD136/138/140 series of medium power transistors produced by Micro Commercial Components. The series offers varying voltage ratings across BD136 (-45V), BD138 (-60V), and BD140 (-80V). All variants share similar current capabilities and packaging styles, providing designers with flexible voltage options within a standardized form factor.
BD138-10, BD138-16