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Product Detailed Parameters
- Description：TRANS NPN 80V 1.5A SOT-32
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
- Power - Max：1.25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：SOT-32
- Grade：-
- Qualification：-
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Overview
The BD139-10 is an NPN silicon epitaxial planar transistor manufactured by STMicroelectronics, housed in a SOT-32 (TO-126) plastic package. It features a collector-emitter voltage of 80 V and a continuous collector current of 1.5 A. The device has a maximum power dissipation of 1.25 W at ambient temperature and 12.5 W at case temperature. DC current gain (hFE) is pre-selected into the 63 to 250 range at IC = 150 mA. It operates with a junction temperature up to 150 °C.
Feature Summary
- Pre-selected DC current gain for consistent performance
- Epitaxial planar construction for reliability
- Designed for complementary or quasi-complementary circuits
Applications
- Audio amplifiers
- General purpose drivers
- Complementary circuit configurations
Procurement Notes
Verify the specific ordering suffix '-10' against official documentation to confirm the hFE grouping requirements. Ensure the procurement channel provides genuine STMicroelectronics products with traceable manufacturing data. Confirm that the SOT-32 package type matches the design specifications before finalizing orders.
Selection Notes
Select this component when a high-gain NPN transistor is required for audio or driver applications within the BD series family. The BD139-10 variant offers a specific hFE binning suitable for designs needing predictable gain characteristics without manual sorting. Consider thermal management constraints given the 1.25 W ambient dissipation limit.
Part Context
The BD139-10 belongs to the BD135-BD140 complementary low voltage transistor series. It serves as the NPN counterpart to the BD140 PNP transistor. This series utilizes epitaxial planar technology and is intended for general-purpose use in audio and driver stages requiring matched performance characteristics.
Replacement Considerations
The BD139-16 is a direct replacement within the same series offering a different hFE grouping. For generic replacements, verify pinout compatibility and ensure voltage and current ratings meet or exceed the original specifications.
FAQ
What is the DC current gain range for the BD139-10?
The DC current gain (hFE) for the BD139-10 is pre-selected between 63 and 250 at a collector current of 150 mA.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 80 V.
Is the BD139-10 part of a complementary pair?
Yes, it is designed to work with the BD140 PNP transistor in complementary or quasi-complementary circuits.
