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Product Detailed Parameters
- Description：TRANS NPN 80V 1.5A SOT-32-3
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
- Power - Max：1.25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：SOT-32-3
- Grade：-
- Qualification：-
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Overview
The BD139 is an NPN silicon epitaxial planar transistor housed in a SOT-32 (TO-126) plastic package. It features a collector-emitter voltage of 80 V, a continuous collector current of 1.5 A, and a peak collector current of 3 A. The device has a maximum power dissipation of 1.25 W at ambient temperature and 12.5 W at case temperature. DC current gain ranges from 25 to 250, with pre-selected groups available. Operating junction temperature reaches 150 °C.
Feature Summary
- Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits
- Manufactured using epitaxial planar technology
- Products are pre-selected in DC current gain
Applications
- Audio amplifiers
- Drivers utilizing complementary circuits
- Drivers utilizing quasi-complementary circuits
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard BD139 does not specify a gain group, whereas suffixes like -10 or -16 indicate pre-selected DC current gain ranges. Confirm the exact part number matches the required hFE specifications for the intended circuit design before procurement.
Selection Notes
Select this component for general-purpose applications requiring an NPN transistor with 80 V collector-emitter voltage and 1.5 A continuous current capability. Ensure the thermal management strategy accounts for the 1.25 W dissipation limit at ambient temperatures. Verify that the required DC current gain falls within the standard range or requires a specific pre-selected group.
Part Context
The BD139 belongs to a family of complementary low-voltage transistors manufactured by STMicroelectronics. It serves as the NPN counterpart to the BD140 PNP transistor. Other related devices include the BD135 and BD136, which share similar characteristics but feature lower voltage ratings of 45 V compared to the 80 V rating of the BD139.
Replacement Considerations
The BD140 is the complementary PNP type within the same series. For lower voltage requirements, the BD135 is an alternative NPN option. Verify pinout compatibility and electrical ratings when substituting.
