BD13910STU

Overview

The BD13910STU is an NPN silicon epitaxial planar transistor manufactured by onsemi. It is housed in a TO-225AA (TO-92) plastic package and designed for audio amplifier and driver applications utilizing complementary or quasi-complementary circuits. The device features a collector-emitter breakdown voltage of 80 V, a continuous collector current of 1.5 A, and a maximum power dissipation of 1.25 W. It offers a DC current gain range of 40 to 250 at 150 mA. The component operates within a junction temperature range of -65°C to +150°C.

Feature Summary

• Epitaxial planar silicon construction for reliable performance
• Pre-selected DC current gain categories for consistent amplification
• Designed for complementary and quasi-complementary circuit topologies

Applications

• Audio amplifier stages
• Driver circuits for complementary configurations
• Quasi-complementary output stages

Procurement Notes

Verify the manufacturer marking matches onsemi specifications. Confirm the package type is TO-225AA (TO-92). Ensure the current gain binning meets the specific design requirements for the intended application.

Selection Notes

Select this component when an NPN transistor with 80 V rating and 1.5 A current capacity is required. Consider the complementary PNP counterpart for push-pull designs. Verify thermal management needs for the TO-92 package in high-power scenarios.

Part Context

This part belongs to the BD13x series of power bipolar transistors. It is paired with the BD140 PNP transistor for complementary operation. The series is widely used in general-purpose audio and linear amplifier applications requiring moderate power handling.

Replacement Considerations

Check for direct equivalents from other manufacturers offering identical pinouts and electrical ratings. Verify that any substitute maintains the same current gain distribution and package dimensions for mechanical compatibility.