ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN 80V 1.5A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：1.25 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
Download product information
Overview
The onsemi BD13916STU is an NPN silicon epitaxial planar transistor housed in a TO-126 three-pin through-hole package. It features a maximum collector-emitter voltage (VCEO) of 80 V and a maximum collector-base voltage (VCBO) of 80 V. The device supports a continuous DC collector current (IC) of 1.5 A with a maximum power dissipation (Pd) of 12.5 W. It has a minimum DC current gain (hFE) of 25 and a maximum emitter-base voltage (VEBO) of 5 V. The component operates at temperatures up to 150°C.
Feature Summary
- Epitaxial planar construction for reliable performance
- Designed for audio amplifiers and drivers
- Suitable for complementary or quasi-complementary circuits
Applications
- Audio amplifier stages
- Driver circuits utilizing complementary configurations
- Quasi-complementary circuit designs
Procurement Notes
Verify the specific suffix '16' against the manufacturer's official datasheet to confirm the exact hFE binning requirements, as this designation indicates a specific gain range distinct from standard variants. Ensure the TO-126 package dimensions match the target PCB footprint. Confirm RoHS compliance status if required by the final assembly specifications.
Selection Notes
Select this component when an NPN transistor with 80 V breakdown and 1.5 A current capability is required in a TO-126 package. Consider the 12.5 W power dissipation limit and thermal management needs for the application. Verify that the minimum hFE of 25 meets the drive requirements of the specific circuit design.
Part Context
This part belongs to the BD139 series of power bipolar transistors. The series includes complementary PNP types such as the BD140. These transistors are engineered for general-purpose power switching and amplification applications, offering a balance of voltage rating and current handling in a standard through-hole package.
Replacement Considerations
The BD13916STU may be functionally replaced by other BD139 series variants with compatible electrical ratings, provided the specific hFE binning matches the circuit requirements. Cross-reference with the manufacturer's substitution guide for confirmed equivalents.
