BD1396STU

Overview

The onsemi BD13916STU is an NPN silicon epitaxial planar transistor housed in a TO-126 (SOT-32) three-pin package designed for through-hole mounting. It features a maximum collector current of 1.5 A and a collector-emitter voltage rating of 80 V, with a matching collector-base voltage of 80 V. The device supports a maximum power dissipation of 12.5 W and operates at junction temperatures up to 150°C. Its DC current gain (hFE) is pre-selected with a minimum value of 25. The component includes a maximum emitter-base voltage of 5 V and measures 8.3 mm in length and 27.5 mm in height.

Feature Summary

• Epitaxial planar construction utilizing NPN silicon technology for robust performance
• Pre-selected DC current gain categories to ensure consistent amplification characteristics
• Designed specifically for audio amplifier and driver applications using complementary circuits

Applications

• Audio amplifier stages
• Driver circuits in quasi-complementary configurations
• General-purpose switching applications requiring high current handling

Procurement Notes

Verify the specific suffix 'STU' against the manufacturer's official datasheet to confirm the exact binning or tape-and-reel specifications, as packaging variations can exist within the same base part number. Ensure the procurement channel provides documentation confirming the component originates from onsemi manufacturing facilities rather than third-party distributors claiming equivalence. Cross-reference the date code and lot number with the latest product change notifications to guarantee compliance with current environmental standards and material compositions.

Selection Notes

Select this component when designing circuits that require an NPN transistor capable of handling 1.5 A continuous collector current with an 80 V breakdown voltage. The TO-126 package offers superior thermal dissipation compared to smaller surface-mount alternatives, making it suitable for power audio applications. Consider the complementary PNP counterpart, such as the BD140, if building push-pull output stages. Evaluate the thermal resistance requirements of the heat sink based on the 12.5 W power dissipation limit under worst-case operating conditions.

Part Context

This component belongs to the BD139 series of power bipolar transistors manufactured by onsemi. The series typically includes complementary pairs, where the BD139 represents the NPN type and the BD140 serves as the corresponding PNP type. These transistors are engineered for medium-power applications, providing a balance between current handling capability and voltage tolerance. The family is widely recognized for its reliability in consumer electronics and industrial control systems requiring discrete power amplification.

Replacement Considerations

Public confirmed substitute part numbers include the STMicroelectronics BD139-16, which shares identical electrical ratings and pinout configuration. Other compatible replacements within the same series may include generic equivalents labeled as BD139-16 from various manufacturers, provided they meet the 1.5 A current and 80 V voltage specifications.