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The BD1396STU is an NPN epitaxial planar silicon power transistor manufactured by onsemi. It utilizes the TO-126 package for through-hole mounting and features three pins. The device supports a maximum continuous collector current of 1.5 A and withstands collector-emitter and collector-base voltages of 80 V each. It has a maximum power dissipation rating of 12.5 W and a minimum DC current gain (hFE) of 25. The component operates at temperatures up to 150°C.
Verify the specific suffix STU against official datasheets to confirm pinout orientation and packaging details. Ensure the manufacturer is identified as onsemi, formerly known as Fairchild Semiconductor, to match historical documentation. Confirm RoHS compliance status if required by local regulations. Cross-reference the part number with authorized distributors to ensure authenticity and traceability.
Select this component when an NPN transistor with 80 V breakdown voltage and 1.5 A current capacity is required. The TO-126 package suits designs needing through-hole assembly and moderate heat sinking. Compare hFE ranges against circuit requirements for consistent gain performance. Consider thermal resistance characteristics for proper heatsink selection in high-power scenarios.
This transistor belongs to the BD139 series, which includes variants with different voltage ratings such as the BD135 and BD137. The BD1396 variant specifically provides 80 V ratings, distinguishing it from lower-voltage siblings. The series is widely used in linear and switching power applications due to its balanced electrical characteristics and reliable TO-126 form factor.
Compatible substitutes include the BD139, BD139G, and BD13916STU. Verify that replacement parts maintain identical voltage, current, and package specifications. Check for equivalent hFE grading to ensure circuit stability. Confirm that any alternative maintains the same NPN polarity and thermal performance metrics.