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The BD140-16 is a PNP silicon epitaxial planar transistor manufactured by STMicroelectronics. It is housed in the SOT-32 plastic package and designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The device features a collector-emitter voltage of -80 V, a continuous collector current of -1.5 A, and a total power dissipation of 1.25 W at an ambient temperature of 25 °C. DC current gain (hFE) is pre-selected into groups ranging from 63 to 250 at a collector current of -150 mA.
Verify that the specific ordering code matches the required hFE group, as the suffix indicates distinct gain ranges. Confirm compliance with environmental standards such as ECOPACK lead-free specifications. Ensure thermal management aligns with the specified junction-to-ambient resistance values during operation.
Select this component when a PNP counterpart to the BD139 is needed for low-voltage audio applications. Consider the specific hFE group requirements for the target circuit design. Evaluate thermal constraints based on the maximum operating junction temperature and available heat dissipation methods.
This part belongs to the BD135-BD140 family of complementary low voltage transistors. It serves as the PNP equivalent to the NPN BD139. The family utilizes standard SOT-32 packaging and is intended for general-purpose applications requiring moderate power handling capabilities.
BD140
The maximum collector-emitter voltage (VCEO) is -80 V.
Products are pre-selected in DC current gain groups ranging from 63 to 250 at IC = -150 mA.
The total power dissipation is 1.25 W at an ambient temperature of 25 °C.