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The BD14010S is a PNP silicon transistor manufactured by onsemi, belonging to the BD140 series. It features a maximum collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 1.5 A. The device has a maximum power dissipation (PD) of 12.5 W at 25°C case temperature, with a thermal derating factor of 100 mW/°C above this temperature. The operating and storage junction temperature range spans from -55°C to +150°C. This component is designed for use in audio amplifiers and driver circuits.
Verify the specific suffix '10S' against official onsemi documentation to confirm package type and compliance status, as standard BD140 variants may differ. Ensure the selected part matches the required voltage and current ratings for the target application. Confirm RoHS compliance if environmental regulations apply. Cross-reference datasheets for thermal management requirements given the 12.5 W dissipation rating.
Select the BD14010S when a PNP transistor with 80 V VCEO and 1.5 A IC capability is required. It serves as a complement to NPN devices like the BD139. Consider the TO-126 or similar through-hole package associated with the '10S' designation for board mounting. Evaluate thermal performance based on the 100 mW/°C derating curve for high-power applications.
This component is part of the BD140 series of medium-power PNP transistors. It is functionally complementary to the BD139 NPN transistor, allowing for matched pairs in push-pull amplifier designs. The series is optimized for audio frequency applications where high linearity and gain are necessary. The '10S' suffix typically denotes a specific package variant within the broader BD140 family.
The BD139 is the complementary NPN counterpart. Other BD140 series variants include BD136G (45 V) and BD138G (60 V). Verify pinout compatibility before substitution. Check if alternative manufacturers offer direct replacements with identical electrical characteristics and package dimensions.