BD159

Overview

The BD159G is a plastic medium-power silicon NPN transistor manufactured by onsemi. It features a collector-emitter voltage of 350 Vdc and continuous collector current of 0.5 Adc. The device supports a peak collector current of 1.0 Adc with a total power dissipation rating of 20 W at 25°C case temperature. Operating junction temperatures range from -65 to +150°C, and the component utilizes a TO-225 package.

Feature Summary

• Designed for high reliability in power output stages
• Suitable for transformerless, line-operated equipment
• High power dissipation rating

Applications

• Television power output stages
• Radio power output stages
• Phonograph power output stages
• Consumer product applications

Procurement Notes

Verify the specific ordering suffix 'G' indicates a lead-free package compliant with RoHS standards. Confirm the package style matches the required TO-225 mechanical outline. Ensure thermal management design accounts for the specified derating curve above 25°C case temperature to maintain the 20W power dissipation limit.

Selection Notes

Select this component when designing power output stages requiring high voltage handling up to 350V. Consider the 0.5A continuous current limit and 20W power dissipation capability relative to the application's thermal constraints. Verify compatibility with transformerless, line-operated circuit topologies common in consumer electronics.

Part Context

This part belongs to the BD159 series of plastic medium-power silicon NPN transistors produced by onsemi. It is specifically engineered for robust performance in consumer electronics power stages. The device represents a standard solution for applications demanding high voltage ratings and reliable operation within typical consumer product environments.

Replacement Considerations

BD159G