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The BD17610STU is a PNP epitaxial silicon transistor designed for medium power linear and switching applications. It features a collector-emitter voltage of -45 V, a continuous collector current rating of -3 A, and a collector dissipation capability of 30 W at 25°C case temperature. The device operates with a junction temperature up to 150°C and includes a DC current gain range of 40 to 250 depending on the specific classification bin.
Verify the exact part number suffix against ON Semiconductor's official ordering database, as Fairchild legacy naming conventions involving underscores may have been updated to dashes during integration. Confirm package type TO-126 availability and ensure compliance with RoHS standards before procurement.
Select this component when a PNP counterpart to the BD175/177/179 series is required. Ensure the application voltage does not exceed -45 V and that heat sinking is provided to maintain case temperatures within limits for the specified 30 W dissipation rating.
This device belongs to the BD176/178/180 family of PNP transistors from ON Semiconductor (formerly Fairchild). These components are engineered for general-purpose medium power handling, offering reliable performance in both analog and digital switching environments across industrial and consumer electronics.
BD176
The maximum continuous DC collector current is -3 A.
No, it is designed for medium power linear and switching applications with a transition frequency of approximately 3 MHz.