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Product Detailed Parameters
- Description：TRANS PNP 60V 3A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：3:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：800mV @ 100mA, 1A
- Current - Collector Cutoff (Max)：100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：30 W
- Frequency - Transition：3MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD17810STU is a PNP bipolar junction transistor manufactured by onsemi, housed in a TO-126-3 package. It features a maximum collector-emitter breakdown voltage of 60 V and a continuous collector current rating of 3 A. The device exhibits a typical saturation voltage of 800 mV at 100 mA base current and 1 A collector current. Maximum collector cutoff current is specified at 100 µA (ICBO). DC current gain is guaranteed to be at least 63 when tested at 150 mA collector current and 2 V collector-emitter voltage.
Feature Summary
- Provides robust current handling capability with a 3 A continuous collector current rating for power switching applications.
- Features low saturation voltage characteristics to minimize power loss during conduction states.
- Offers high voltage blocking capability with a 60 V collector-emitter breakdown rating.
Applications
- General-purpose power switching circuits
- Linear amplifier stages requiring PNP configuration
- Motor control interface drivers
Procurement Notes
Verify the specific manufacturer source, as this component originates from Fairchild Semiconductor prior to its acquisition by onsemi. Ensure the ordering suffix matches the required tape-and-reel or tube packaging format if applicable. Confirm that the TO-126-3 lead form and thermal resistance specifications align with your board layout requirements before finalizing procurement.
Selection Notes
Select this component when a PNP transistor with a 60 V rating and 3 A capacity is required. Consider the TO-126-3 package for through-hole mounting where moderate heat dissipation is needed. Evaluate the minimum hFE of 63 against your circuit's drive requirements to ensure sufficient gain margins are maintained under all operating conditions.
Part Context
This part belongs to the family of single NPN and PNP bipolar transistors offered by onsemi. These discrete semiconductors serve as fundamental building blocks for analog signal processing and power management tasks. The BD17810STU specifically addresses applications needing reliable PNP switching performance within standard industrial voltage limits.
Replacement Considerations
Consult official cross-reference data for direct pin-compatible substitutes. Verify that any alternative device maintains identical polarity, voltage ratings, and package dimensions to ensure seamless integration without redesigning the printed circuit board.
