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The BD234G is a PNP silicon medium power bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 45 Vdc, a collector-base voltage of 60 Vdc, and an emitter-base voltage of 5.0 Vdc. The device supports a continuous collector current of 2.0 Adc with a total device dissipation of 25 W at 25°C case temperature. Electrical characteristics include a minimum DC current gain of 40 at 0.15 A and 25 at 1.0 A. It operates within a junction temperature range of -55 to +150°C.
Verify the discontinuation status before procurement as the component is not recommended for new designs. Confirm availability through authorized distributors and check for lead times associated with remaining stock. Ensure compliance with RoHS standards and Pb-free packaging requirements specified in the ordering information section of the datasheet.
Select this component for applications requiring a PNP medium power transistor with specific voltage ratings of 45 V collector-emitter and 60 V collector-base. Consider the thermal resistance of 5.0°C/W and the TO-225 package style for mounting requirements. Evaluate the current gain specifications against the load requirements to ensure adequate drive capability.
The BD234G belongs to the BD23x series of plastic medium power bipolar transistors from onsemi. This series includes complementary NPN devices such as the BD237G and BD238G. These components are engineered for medium power applications, specifically targeting audio and driver stages where high current gain and reliable operation are necessary.
The datasheet indicates that these devices are discontinued and not recommended for new designs. Contact onsemi representatives for alternative recommendations. No direct substitute part numbers are listed in the provided documentation.