SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BD235 is a low voltage NPN power transistor manufactured using Planar technology with a Base Island layout. It provides exceptional high gain performance coupled with very low saturation voltage. The device features a collector current of 2 A and a peak collector current of 6 A. Total dissipation reaches 25 W at a case temperature of 25°C. Collector-emitter voltage (VCEO) is rated at 60 V, while collector-base voltage (VCBO) is 60 V. Emitter-base voltage (VEBO) is 5 V. Maximum operating junction temperature is 150°C.
Verify the specific part number against official STMicroelectronics documentation to confirm availability status and exact electrical specifications. Ensure that the selected component meets all required absolute maximum ratings for your application environment. Check for any updates in the datasheet revision history regarding minor text changes or parameter adjustments before finalizing procurement decisions.
Select the BD235 when designing circuits requiring high DC current gain and low saturation voltage characteristics. Consider its 2 A continuous collector current capability and 25 W total dissipation rating for thermal management planning. Evaluate the 60 V collector-emitter voltage rating against circuit requirements. Compare performance against complementary PNP types like the BD238 if push-pull configurations are needed.
The BD235 belongs to a family of low voltage NPN power transistors manufactured by STMicroelectronics. It utilizes Planar technology with a Base Island layout to achieve high gain and low saturation voltage. Complementary PNP types include the BD236 and BD238. The device is housed in an SOT-32 package, also known as TO-126, and is supplied in tube packaging.
Complementary PNP types include the BD236 and BD238.