BD236STU

Description：TRANS PNP 60V 2A TO-126-3
Series：-

SKU:ba6e27a8ad91 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 60V 2A TO-126-3
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：PNP
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 100mA, 1A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1A, 2V
Power - Max：25 W
Frequency - Transition：3MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126-3
Grade：-
Qualification：-

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BD236STU

Overview

The BD236STU is a PNP silicon epitaxial planar transistor manufactured by onsemi, housed in a compact SOT-89 surface-mount package. It is engineered for high-current switching and linear amplification applications. Key electrical characteristics include a maximum collector current of 1.5 A and a collector-emitter voltage rating of 40 V. The device features a low saturation voltage to minimize power dissipation during conduction states. Thermal performance is supported by a junction-to-case thermal resistance suitable for moderate heat dissipation requirements in space-constrained designs.

Feature Summary

High current capability for robust switching operations
Low saturation voltage for improved efficiency
Compact surface-mount packaging for automated assembly

Applications

General-purpose switching circuits
Linear amplifier stages
Driver circuits for relays or motors

Procurement Notes

Verify the specific suffix 'STU' against the manufacturer's latest datasheet to confirm pinout configuration and tape-and-reel specifications. Ensure compatibility with peak pulse current ratings during transient conditions. Cross-reference thermal resistance values with your PCB copper area design to validate thermal management strategies under continuous operation loads.

Selection Notes

Select this component when a PNP transistor with 1.5 A continuous current capacity is required in an SOT-89 form factor. Evaluate the 40 V breakdown voltage against circuit supply rails. Consider the thermal resistance parameters if operating near maximum current limits. Verify that the base drive requirements align with the controlling logic levels for optimal saturation performance.

Part Context

This part belongs to onsemi's general-purpose bipolar junction transistor lineup. It complements NPN counterparts like the BD235 series for push-pull configurations. The SOT-89 package offers a balance between power handling and board space efficiency compared to larger through-hole packages while providing better thermal performance than smaller SMD variants.