BD236STU

Overview

The BD236STU is a high-voltage NPN power transistor manufactured by onsemi. It utilizes high voltage multi epitaxial planar technology designed for applications requiring fast switching speeds. The device incorporates a cellular emitter structure with planar edge termination to enhance performance while maintaining satisfactory Reverse Biased Safe Operating Area (RBSOA). Key electrical characteristics include a collector-emitter voltage rating of 400V and a continuous collector current capacity of 1A. The component operates within a junction temperature range of -55°C to +175°C and is housed in a compact SOT-89 surface-mount package.

Feature Summary

• High voltage capability suitable for demanding power applications
• Very high switching speed enabled by specialized planar edge termination
• Integrated antiparallel collector-emitter diode for simplified circuit design
• Minimum lot-to-lot parameter spread ensuring reliable operation

Applications

• High voltage switching circuits
• Power supply designs requiring fast transient response
• Industrial control systems utilizing NPN power transistors

Procurement Notes

Verify the specific datasheet revision and ordering information directly with onsemi or authorized distributors. Confirm that the SOT-89 package dimensions and thermal characteristics align with your PCB layout requirements. Ensure compliance with RoHS directives if applicable to your manufacturing standards. Cross-reference the part number BD236STU with official manufacturer catalogs to confirm current production status and availability before finalizing procurement plans.

Selection Notes

Select this component when high voltage isolation and rapid switching are critical. The integrated antiparallel diode reduces external component count. Evaluate thermal management needs due to the SOT-89 package size. Compare RBSOA specifications against load conditions. Consider the wide operating temperature range for harsh environments. Verify pinout compatibility if replacing existing designs.

Part Context

This NPN power transistor belongs to onsemi's portfolio of high-voltage discrete devices. It is engineered for robustness in power electronics. The use of multi epitaxial planar technology distinguishes it from older bipolar technologies. It serves as a solution for applications needing reliable high-speed switching under high voltage stress. The product line emphasizes consistency and performance stability across manufacturing lots.

Replacement Considerations

Check for direct substitutes with identical pinouts and voltage ratings. Verify that alternative components meet the same switching speed and RBSOA requirements. Ensure the replacement package matches the SOT-89 form factor for board compatibility. Confirm thermal resistance values are comparable to maintain system reliability.