BD239B-S

Overview

The BD239B-S is an NPN silicon power transistor manufactured by Bourns Inc. It is housed in a TO-220 package and rated for a collector current of 2A with a collector-emitter voltage of 80V. The component supports a maximum power dissipation of 30W, operating within a temperature range from -65°C to +150°C.

Feature Summary

• NPN silicon construction for robust power switching
• TO-220 through-hole mounting configuration
• High thermal stability up to 150°C

Applications

• General-purpose power amplification
• Switching regulator circuits
• Industrial control systems

Procurement Notes

Verify the specific suffix 'S' against the manufacturer's official documentation to confirm package variations or compliance status. Confirm that the component meets required RoHS standards if applicable. Cross-reference the part number with authorized distributors to ensure authenticity and traceability before procurement.

Selection Notes

Select this component for applications requiring moderate current handling and high voltage blocking capabilities. Ensure the thermal management design accommodates the specified power dissipation limits. Verify that the operating temperature range aligns with the environmental conditions of the target system.

Part Context

This part belongs to the BD239 series of NPN silicon power transistors. The series includes variants such as BD239, BD239A, and BD239C. Note that some sources indicate this series may be obsolete for new designs; verify current availability and recommended status with the manufacturer.

Replacement Considerations

Consult official substitution lists for compatible NPN power transistors with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics when replacing with alternative parts.