BD239C

Overview

The onsemi BD239C is a single NPN silicon power bipolar transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 100V and a continuous collector current rating of 4A. The device is housed in a TO-220AB flange-mount package, facilitating efficient thermal dissipation with a maximum power dissipation capability of 30W. It supports a maximum operating junction temperature of 150°C and includes a minimum DC current gain (hFE) of 15.

Feature Summary

• High-voltage operation with 100V collector-emitter breakdown
• Robust 4A continuous collector current handling
• Thermal management via TO-220AB flange mount design

Applications

• General-purpose power switching circuits
• Medium-power amplifier stages
• Industrial control systems requiring high-voltage NPN transistors

Procurement Notes

Verify the specific suffix against manufacturer documentation to confirm exact electrical tolerances and packaging variations. Ensure the procurement channel provides official datasheets matching the BD239C designation to avoid confusion with similar variants like the BD239CTU which may have different current ratings.

Selection Notes

Select this component when a 100V NPN transistor with 4A current capacity is required. The TO-220AB package is suitable for through-hole mounting where heat sinking is necessary. Compare hFE requirements against circuit load needs, noting the minimum gain specification.

Part Context

This part belongs to the family of power bipolar transistors manufactured by onsemi. It serves as a discrete semiconductor solution for medium-to-high power electronics, distinct from low-signal devices like the BC239 series or integrated circuits such as comparators and microcontrollers found in the same product catalog.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.