BD239CTU

$1.22

Description：TRANS NPN 100V 2A TO-220-3
Series：-

SKU:a750dc0c086f Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 100V 2A TO-220-3
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：700mV @ 200mA, 1A
Current - Collector Cutoff (Max)：300µA
DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 1A, 4V
Power - Max：30 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

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BD239CTU

Overview

The onsemi BD239CTU is a single NPN bipolar junction transistor housed in a TO-220AB through-hole package. It features a maximum collector-emitter voltage (VCEO) of 115 V and a collector-base voltage (VCBO) of 100 V, with a minimum emitter-base voltage (VEBO) of 5 V. The device supports a continuous DC collector current (IC) of 2 A and a maximum power dissipation (Pd) of 30 W. Key electrical characteristics include a minimum DC current gain (hFE) ranging from 40 to 15 depending on the specific datasheet source, and a saturation voltage of 700 mV. It operates at temperatures up to 150 °C.

Feature Summary

High voltage capability with 115 V collector-emitter breakdown
Robust 2 A continuous current handling for power applications
Through-hole TO-220AB packaging for efficient heat dissipation

Applications

General-purpose switching circuits
Linear regulator output stages
Power amplifier driver stages

Procurement Notes

Verify the specific manufacturer lot code and date code upon receipt to ensure component authenticity. Confirm that the physical marking matches the BD239CTU designation exactly. Check for any visible damage to the leads or package integrity before installation. Ensure the supplier provides traceability documentation consistent with onsemi manufacturing standards.

Selection Notes

Select this component when a high-voltage NPN BJT is required for moderate power levels. The TO-220 package facilitates direct mounting to heatsinks for thermal management. Consider the hFE variation between different datasheet sources during circuit design to ensure adequate base drive margins under all operating conditions.

Part Context

This part belongs to the general-purpose power transistor category from onsemi. It serves as a discrete solution for amplification and switching tasks where integrated circuits lack sufficient voltage or current ratings. The TO-220 form factor is standard for industrial and consumer electronics requiring reliable through-hole assembly.