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The BD241BTU is an NPN epitaxial silicon power transistor manufactured by Fairchild Semiconductor. It features a collector-emitter voltage (VCEO) of 80 V and a maximum DC collector current (IC) of 3 A. The device utilizes a TO-220AB flange mount package with three terminals, identified by the JEDEC code TO-220AB and JESD-30 code R-PSFM-T3. It has a minimum DC current gain (hFE) of 10. The component is lead-free, RoHS compliant, and classified under ECCN EAR99.
Verify the specific suffix TU against official Fairchild documentation to confirm the exact packaging configuration and terminal finish. Ensure compliance requirements such as RoHS status match project specifications. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm availability and authenticity before procurement.
Select this component when an NPN power transistor with 80 V collector-emitter voltage and 3 A continuous current capability is required. The TO-220 package is suitable for through-hole mounting on heatsinks. Consider the complementary BD242 series if a PNP counterpart is needed for push-pull configurations.
The BD241BTU belongs to the BD241 family of medium power NPN transistors. These devices are designed for general-purpose power amplification and switching. The 'TU' suffix typically denotes the specific tape and reel or tube packaging variant within the TO-220 form factor, distinct from other mechanical variations in the same electrical family.
Official substitutes include the BD241B for identical electrical specifications in different packaging. The BD241A offers higher gain but lower voltage ratings. Verify pinout compatibility and thermal resistance differences when replacing with generic equivalents.