BD241C

Description：TRANS NPN 100V 3A TO-220
Series：-

SKU:30962e5438d4 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 100V 3A TO-220
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：1.2V @ 600mA, 3A
Current - Collector Cutoff (Max)：300µA
DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1A, 4V
Power - Max：40 W
Frequency - Transition：3MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220
Grade：-
Qualification：-

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BD241C

Overview

The BD241C is an NPN silicon power transistor manufactured by onsemi in a TO-220AB package. It features a collector-emitter voltage (VCEO) of 100 Vdc and a continuous collector current (IC) of 3.0 Adc. The device supports a peak collector current (ICM) of 5.0 Adc and has a total device dissipation (PD) of 40 W at 25°C case temperature. Key electrical characteristics include a DC current gain (hFE) minimum of 25 at IC = 1.0 Adc, a collector-emitter saturation voltage (VCE(sat)) of 1.2 Vdc, and a current gain-bandwidth product (fT) of 3.0 MHz.

Feature Summary

High current gain-bandwidth product for general-purpose amplifier applications
Compact TO-220AB plastic package with epoxy meeting UL94 V-0 flammability rating
Designed for use in switching and amplification circuits

Applications

General purpose amplifier circuits
Switching applications

Procurement Notes

Verify the specific ordering suffix to confirm lead status and packaging details. The standard BD241C designation may refer to discontinued or legacy versions; ensure the selected part number matches current production availability. Confirm RoHS compliance and Pb-free status if required by assembly specifications. Check for any recent design changes or obsolescence notices from onsemi before finalizing procurement.

Selection Notes

Select the BD241C when a high-voltage NPN power transistor with moderate current handling is required. Ensure the application operates within the 100 V collector-emitter limit and 3 A continuous current rating. Consider thermal management requirements as the device dissipates up to 40 W. Verify that the required current gain meets the circuit's drive conditions, noting the minimum hFE specification.

Part Context

The BD241C belongs to the complementary silicon plastic power transistor family from onsemi, which includes PNP counterparts such as the BD242B and BD242C. These devices are designed for similar general-purpose roles but differ in polarity. The BD241C specifically serves as the NPN element in push-pull or single-ended configurations requiring robust power handling capabilities.