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Product Detailed Parameters
- Description：TRANS NPN 100V 3A TO-220
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：3:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：1.2V @ 600mA, 3A
- Current - Collector Cutoff (Max)：300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 3A, 4V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The BD241C is a silicon epitaxial-base NPN power transistor manufactured by STMicroelectronics. It is housed in a TO-220 plastic package and designed for medium power linear and switching applications. Key electrical ratings include a collector-emitter voltage (VCEO) of 100 V, a continuous collector current (IC) of 3 A, and a total power dissipation (Ptot) of 40 W at a case temperature of 25°C or lower. The device features a minimum DC current gain (hFE) of 25 at IC = 1 A.
Feature Summary
- Manufactured using planar technology with a base island layout to achieve high gain performance and low saturation voltage.
- Designed specifically for use in medium power linear and switching applications.
Applications
- Medium power linear circuits
- Switching applications
Procurement Notes
Verify the specific part number suffix against official manufacturer documentation to confirm exact electrical characteristics, as variations exist within the BD241 series. Ensure compatibility with required thermal management solutions given the 40 W dissipation rating. Confirm RoHS compliance status through the latest datasheet revision before procurement.
Selection Notes
Select the BD241C when a 100 V collector-emitter voltage rating is required alongside a 3 A continuous current capability. Consider the TO-220 package for through-hole mounting and adequate heat sinking. Compare against complementary PNP types like the BD242C if push-pull configurations are needed.
Part Context
The BD241C belongs to the BD241A/B/C series of complementary silicon power transistors produced by STMicroelectronics. This series includes NPN variants (BD241) and corresponding PNP types (BD242). These components are marketed as preferred sale types for general-purpose power amplification tasks.
Replacement Considerations
Complementary PNP counterparts include the BD242C. Other manufacturers produce similar NPN power transistors, but direct pin-compatible replacements require matching VCEO, IC, and package specifications.
FAQ
What is the maximum collector-emitter voltage for the BD241C?
The maximum collector-emitter voltage (VCEO) for the BD241C is 100 V.
What packaging does the BD241C utilize?
The BD241C is mounted in a JEDEC TO-220 plastic package.
Is the BD241C suitable for high-frequency operation?
The datasheet specifies it for medium power linear and switching applications without highlighting high-frequency capabilities beyond standard switching speeds.
