BD242ATU

$0.17

Description：TRANS PNP 60V 3A TO-220-3
Series：-

SKU:3211043a0d78 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 60V 3A TO-220-3
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：PNP
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：1.2V @ 600mA, 3A
Current - Collector Cutoff (Max)：300µA
DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1A, 4V
Power - Max：40 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

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BD242ATU

Overview

The BD242ATU is a PNP epitaxial silicon power transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 80 V and a maximum DC collector current (IC) of 3 A. The device utilizes a TO-220AB through-hole package with three pins. Key electrical ratings include a collector-base voltage (VCBO) of 80 V, an emitter-base voltage (VEBO) of 5 V, and a maximum power dissipation (Pd) of 65 W at 25°C case temperature. The minimum DC current gain (hFE) is specified as 10, with a maximum transition frequency (ft) of 1 MHz. Operating temperatures range from -65°C to 150°C.

Feature Summary

PNP polarity configuration for complementary circuit designs
Planar technology construction with Base Island layout
High gain performance characteristics
Low saturation voltage capability

Applications

Medium power linear applications
Switching applications
Complementary circuits paired with BD241A counterparts

Procurement Notes

Verify the specific suffix TU against official onsemi documentation to confirm the exact tape-and-reel or tube packaging variant intended for your assembly process. Confirm that the 80 V rating aligns with your system requirements, as other variants in the BD242 series offer different voltage levels. Ensure thermal management strategies account for the 65 W dissipation limit under appropriate case temperature conditions.

Selection Notes

Select this component when a PNP power transistor with 80 V breakdown and 3 A continuous current capacity is required. The BD242ATU serves as the complementary counterpart to the NPN BD241A transistor. Consider the TO-220AB package constraints for board space and heat sinking needs. Verify that the hFE minimum of 10 meets the drive requirements of your specific application circuit.

Part Context

The BD242ATU belongs to the BD242/A/B/C family of medium power linear and switching transistors. These devices are manufactured using planar technology with a 'Base Island' layout to achieve high gain and low saturation voltage. The BD242 series is designed to complement the BD241 series NPN transistors, providing matched pairs for push-pull amplifier stages and other dual-transistor configurations in power electronics.