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Product Detailed Parameters
- Description：TRANS PNP 80V 3A TO-220
- Series：-
- Mfr：onsemi
- Package：Tube
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：3:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：1.2V @ 600mA, 3A
- Current - Collector Cutoff (Max)：300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1A, 4V
- Power - Max：40 W
- Frequency - Transition：3MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The BD242BG is a discontinued PNP silicon epitaxial power transistor manufactured by onsemi. It utilizes a TO-220AB (CASE 221A) package with three pins and lead-free construction. The device supports a continuous collector current of 3.0 A and peak currents up to 5.0 A. Maximum ratings include an 80 V collector-emitter voltage (VCEO), 90 V collector-emitter sustaining voltage (VCES), and 5.0 V emitter-base voltage (VEB). Total device dissipation is rated at 40 W at 25°C case temperature, with a derating factor of 0.32 W/°C above that threshold. The junction temperature range spans from -65°C to +150°C.
Feature Summary
- Designed for general-purpose amplifier and switching applications
- High current gain-bandwidth product
- Compact TO-220AB epoxy package meeting UL94 V-0 flammability rating
Applications
- General purpose linear amplification circuits
- Electronic switching applications
Procurement Notes
This component is officially discontinued and not recommended for new designs. Verify availability through authorized distributors or secondary markets. Contact onsemi representatives for potential obsolescence management options or alternative part recommendations. Ensure strict adherence to datasheet maximum ratings during any existing inventory usage.
Selection Notes
Select this component only for legacy system maintenance or repair where the original design specification requires the exact BD242BG footprint and electrical characteristics. Evaluate thermal management requirements carefully due to the 40 W dissipation limit. Confirm compatibility with existing PCB mounting holes and pin configurations before procurement.
Part Context
The BD242BG belongs to the BD24x family of complementary silicon plastic power transistors. It serves as the PNP counterpart to the NPN BD241C. The 'G' suffix indicates a lead-free package compliant with RoHS standards. This series is engineered for medium-power applications requiring robust performance in both linear and switching modes within standard industrial environments.
Replacement Considerations
BD242CG
FAQ
What is the maximum collector-emitter voltage for the BD242BG?
The maximum collector-emitter voltage (VCEO) is 80 Vdc.
Is the BD242BG suitable for high-frequency RF applications?
No, it is designed for general-purpose amplifier and switching applications with a current gain-bandwidth product of 3.0 MHz, not specialized RF use.
How does the BD242BG differ electrically from the BD242C?
The BD242BG (equivalent to BD242B) has a lower collector-emitter voltage rating of 80 V compared to the BD242C's 100 V rating.
