BD242CG

$1.11

Description：TRANS PNP 100V 3A TO-220
Series：-

SKU:cedd296aceeb Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 100V 3A TO-220
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：PNP
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：1.2V @ 600mA, 3A
Current - Collector Cutoff (Max)：300µA
DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1A, 4V
Power - Max：40 W
Frequency - Transition：3MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220
Grade：-
Qualification：-

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BD242CG

Overview

The BD242CG is a PNP epitaxial silicon power transistor manufactured by onsemi. It features a TO-220AB (CASE 221A) package with three pins and through-hole mounting. The device supports a continuous collector current of 3 A and a peak collector current of 5 A. Maximum ratings include a collector-emitter voltage (VCEO) of 80 Vdc, a collector-base voltage (VCBO) of 90 Vdc, and an emitter-base voltage (VEB) of 5.0 Vdc. Total device dissipation is rated at 40 W at a case temperature of 25°C. The component operates within a junction temperature range of -65°C to +150°C.

Feature Summary

Designed for complementary use with the BD241 series in general-purpose amplifier and switching applications
High current gain-bandwidth product suitable for linear and switching operations
Epoxy material meets UL94 V-0 flammability rating

Applications

General purpose amplifier circuits
Switching applications
Complementary power transistor configurations

Procurement Notes

Verify the specific suffix 'G' indicates a lead-free and RoHS compliant package configuration as documented in the ordering information section. Confirm that the BD242CG corresponds to the BD242C variant specifications rather than the BD242B variant, as both share the same package but differ in voltage ratings. Ensure procurement channels provide the correct datasheet revision matching the ordered part number to avoid confusion between similar complementary devices.

Selection Notes

Select this component when a PNP power transistor is required to complement an NPN device from the BD241 series. Consider the 80 V collector-emitter voltage limit and 3 A continuous current capability against circuit requirements. Evaluate thermal management needs based on the 40 W dissipation rating at 25°C case temperature and the specified thermal resistance values. Verify compatibility with the intended switching or amplification frequency range given the 3 MHz gain-bandwidth product.

Part Context

The BD242CG belongs to the BD241C/D family of complementary silicon plastic power transistors produced by onsemi. This family includes the NPN BD241C and PNP variants BD242B and BD242C. The BD242CG specifically denotes the lead-free version of the BD242C device. These transistors are designed for medium power linear and switching applications, offering high current gain and robust performance in standard TO-220 packages.