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The onsemi BD243ATU is an NPN epitaxial silicon power transistor housed in a TO-220AB package. It features a maximum collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 100 V. The device supports a continuous DC collector current of 6 A and a peak pulse collector current of 12 A. Maximum power dissipation is rated at 65 W at 25°C case temperature. The minimum DC current gain (hFE) is specified as 20. Operating temperatures range from -65°C to +150°C junction temperature.
Verify the specific suffix 'TU' against official manufacturer documentation, as standard datasheets typically list 'BD243A'. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability varies by region and production lot. Ensure the ordering part number matches the exact voltage rating required for the application circuit.
Select this component when a 60 V NPN power transistor is required for medium-power circuits. Compare against BD243B (80 V) or BD243C (100 V) if higher voltage ratings are needed. Verify thermal management requirements for the TO-220 package, as the 65 W dissipation rating assumes adequate heatsinking. Check complementary PNP options like BD242A for push-pull configurations.
The BD243A belongs to a family of medium-power NPN transistors designed for linear and switching uses. It serves as the NPN complement to the BD244A PNP transistor. The family includes variants with different voltage ratings: BD243 (45 V), BD243A (60 V), BD243B (80 V), and BD243C (100 V). All share similar current and power capabilities within the TO-220 package.
Direct substitutes include BD243A from other manufacturers such as STMicroelectronics or Diodes Inc., provided pinouts and electrical parameters match. Generic equivalents like MJE243 may offer lower current ratings (4 A) and require verification. Always confirm package compatibility and thermal resistance values before substitution.